Schottky Barrier Diode(IN5819)

Schottky Barrier Diode(IN5819) Part N0.B5819WS S4 PKG:SOD-323 LED package:Colorless scattering encapsulation (W)

1.     Article:Schottky Barrier Diode(IN5819)

2.   Description:

Brand	Homebred	Model	IN5819
Application scope	Schottky	Structure	Spot touch type
Material	N	Encapsulation	Resin
Part N0.	B5819WS  S4	PKG	SOD-323
Packaging materials	Resin Package	Power	medium power
The frequency characteristics	Medium	LED package	Colorless scattering encapsulation (W)
The lighting feature	Square	The luminous intensity angular distribution	Standard form
Positive working current	1.0V	The highest reverse voltage	40.0V

3.     Instruction:

This Schottky barrier diode bus-termination array is designed to reduce reflection noise on memory bus lines. This device consists of an 8-bit high-speed Schottky diode array suitable for a clamp to GND.

TheIN5819 is characterized for operation from 0°C to 70°C.

4. Feature:

(1) Because schottky barrier height below PN junction potential barrier height, so it is guide tong threshold voltage and positive pressure drop than PN junction diode low (about low 0.2 V).

(2) Because SBD is a majority carrier conductive device, does not exist minority carriers life and reverse recovery problem. SBD reverse recovery time just schottky barrier of capacitance charger, discharge time, totally different PN junction of the diode's reverse recovery time. Because SBD of reverse recovery charge is very little, so switch very fast, switch loss also special small, especially suitable for high frequency application.

However, because SBD reverse potential barrier thinner, and in its surface easily happened breakdown, so reverse breakdown voltage is quite low. Because SBD more easily than PN junction diode heated breakdown, reverse leakage current than PN junction diode.

5.     Main market:

(1) North America

(2) South America

(3) Easter Asia

(4) Western Europe

6.Delivery:

10~15 working days after payment

Schottky Barrier Diode(IN5819)